PART |
Description |
Maker |
IPP07N03LBG IPP07N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP04N03LBG IPP04N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP06CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP12CN10LG IPS12CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP13N03LBG IPP13N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPF12N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
BSC119N03S BSC119N03SG Q7042S4292 Q7042-S4292 INFI |
OptiMOS®2 - SuperSO8, SO8, DPAK OptiMOS2 Power-Transistor OptiMOS2功率晶体
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
IPBH6N03LAG |
OptiMOS2 Power-Transistor OptiMOS㈢2 Power-Transistor
|
Infineon Technologies AG
|
BSR202N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSL302SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSS306N |
OptiMOS2 Small-Signal-Transistor Avalanche rated Qualified according to AEC Q101
|
TY Semiconductor Co., Ltd
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|